PSMN2R0-60ES,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN2R0-60ES - 120A, 60
$1.29
Available to order
Reference Price (USD)
1+
$3.51000
50+
$2.82160
100+
$2.57070
500+
$2.08164
1,000+
$1.75560
Exquisite packaging
Discount
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Boost your electronic applications with PSMN2R0-60ES,127, a reliable Transistors - FETs, MOSFETs - Single by NXP Semiconductors. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PSMN2R0-60ES,127 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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