IMBG120R140M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 18A TO263
$12.55
Available to order
Reference Price (USD)
1+
$12.55000
500+
$12.4245
1000+
$12.299
1500+
$12.1735
2000+
$12.048
2500+
$11.9225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IMBG120R140M1HXTMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IMBG120R140M1HXTMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
IXYS
IXFK64N60P3
Vishay Siliconix
SUP40010EL-GE3
Vishay Siliconix
SIHA18N60E-E3
Vishay Siliconix
SI7848BDP-T1-E3
Infineon Technologies
IPB60R280P7ATMA1
IXYS
IXFX120N20
onsemi
NVHL025N65S3
NXP USA Inc.
PMV22EN,215
Infineon Technologies
IPI47N10SL26AKSA1
Infineon Technologies