IPI47N10SL26AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 47A TO262-3
$1.67
Available to order
Reference Price (USD)
500+
$1.25856
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPI47N10SL26AKSA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IPB60R160P6ATMA1
Vishay Siliconix
SIHD6N80AE-GE3
Nexperia USA Inc.
PH6930DL115
Infineon Technologies
IPP80N04S403AKSA1
NXP USA Inc.
PSMN016-100XS,127
Diodes Incorporated
DMP45H150DHE-13
Diotec Semiconductor
MMFTN20
onsemi
5LP01M-TL-H
Goford Semiconductor
G60N10T
Renesas Electronics America Inc