IXFX120N20
IXYS
IXYS
MOSFET N-CH 200V 120A PLUS247
$16.12
Available to order
Reference Price (USD)
1+
$17.42000
30+
$14.65200
120+
$13.46400
510+
$11.48400
Exquisite packaging
Discount
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IXYS presents IXFX120N20, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFX120N20 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
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