IPB60R160P6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 23.8A D2PAK
$2.90
Available to order
Reference Price (USD)
1,000+
$1.77054
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPB60R160P6ATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPB60R160P6ATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHD6N80AE-GE3
Nexperia USA Inc.
PH6930DL115
Infineon Technologies
IPP80N04S403AKSA1
NXP USA Inc.
PSMN016-100XS,127
Diodes Incorporated
DMP45H150DHE-13
Diotec Semiconductor
MMFTN20
onsemi
5LP01M-TL-H
Goford Semiconductor
G60N10T
Renesas Electronics America Inc
NP100P06PDG-E1-AY
Rohm Semiconductor