RGTV80TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 40A FIELD STOP TRENCH IGBT
$6.41
Available to order
Reference Price (USD)
1+
$6.41000
500+
$6.3459
1000+
$6.2818
1500+
$6.2177
2000+
$6.1536
2500+
$6.0895
Exquisite packaging
Discount
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The RGTV80TS65DGC11 Single IGBT from Rohm Semiconductor delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Rohm Semiconductor's commitment to innovation ensures RGTV80TS65DGC11 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 234 W
- Switching Energy: 1.02mJ (on), 710µJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 39ns/113ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 101 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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