STGWA40H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V 40
$4.12
Available to order
Reference Price (USD)
1+
$4.12000
500+
$4.0788
1000+
$4.0376
1500+
$3.9964
2000+
$3.9552
2500+
$3.914
Exquisite packaging
Discount
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Choose STGWA40H65DFB2 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGWA40H65DFB2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 72 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 230 W
- Switching Energy: 765µJ (on), 410µJ (off)
- Input Type: Standard
- Gate Charge: 153 nC
- Td (on/off) @ 25°C: 18ns/72ns
- Test Condition: 400V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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