IAUZ40N06S5N105ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_)40V 60V) PG-TSDSON-8
$0.44
Available to order
Reference Price (USD)
1+
$0.44120
500+
$0.436788
1000+
$0.432376
1500+
$0.427964
2000+
$0.423552
2500+
$0.41914
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IAUZ40N06S5N105ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IAUZ40N06S5N105ATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
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