HGTD3N60B3S
Harris Corporation
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
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Upgrade your power electronics with HGTD3N60B3S Single IGBTs by Harris Corporation, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Harris Corporation for top-quality components that meet global standards. Request a quote now to learn more about how HGTD3N60B3S can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
- Power - Max: 33.3 W
- Switching Energy: 66µJ (on), 88µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 480V, 3.5A, 82Ohm, 15V
- Reverse Recovery Time (trr): 16 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3 (DPAK)
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