FGH4L40T120LQD
onsemi
onsemi
1200V 40A FSIII IGBT LOW VCESAT
$8.84
Available to order
Reference Price (USD)
1+
$8.84000
500+
$8.7516
1000+
$8.6632
1500+
$8.5748
2000+
$8.4864
2500+
$8.398
Exquisite packaging
Discount
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Choose FGH4L40T120LQD Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes FGH4L40T120LQD a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 306 W
- Switching Energy: 1.04mJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 227 nC
- Td (on/off) @ 25°C: 42ns/218ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
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