HGTD10N50F1
Harris Corporation
Harris Corporation
10A, 500V N-CHANNEL IGBT
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
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Enhance your electronic designs with HGTD10N50F1 Single IGBTs from Harris Corporation, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Harris Corporation's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.4 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-PAK
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