GT40WR21,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-3PN(
$8.48
Available to order
Reference Price (USD)
1+
$8.48120
500+
$8.396388
1000+
$8.311576
1500+
$8.226764
2000+
$8.141952
2500+
$8.05714
Exquisite packaging
Discount
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Discover high-performance GT40WR21,Q Single IGBTs from Toshiba Semiconductor and Storage, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, GT40WR21,Q ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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