RBN75H65T1FPQ-A0#CB0
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$7.02
Available to order
Reference Price (USD)
1+
$7.02000
500+
$6.9498
1000+
$6.8796
1500+
$6.8094
2000+
$6.7392
2500+
$6.669
Exquisite packaging
Discount
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The RBN75H65T1FPQ-A0#CB0 Single IGBT from Renesas Electronics America Inc delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Renesas Electronics America Inc's commitment to innovation ensures RBN75H65T1FPQ-A0#CB0 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 312 W
- Switching Energy: 1.6mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 54 nC
- Td (on/off) @ 25°C: 29ns/113ns
- Test Condition: 400V, 75A, 16Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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