HGTG12N60DID
Harris Corporation
Harris Corporation
24A, 600V, RUGGED, UFS SERIES N
$3.15
Available to order
Reference Price (USD)
1+
$3.15000
500+
$3.1185
1000+
$3.087
1500+
$3.0555
2000+
$3.024
2500+
$2.9925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose HGTG12N60DID Single IGBTs by Harris Corporation for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Harris Corporation's reputation for quality makes HGTG12N60DID a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
IXYS
IXBA16N170AHV-TRL
Infineon Technologies
SIGC109T120R3
Harris Corporation
HGTG40N60C3R
Harris Corporation
HGTD7N60B3S
STMicroelectronics
STGP20H65FB2
onsemi
NGTD13T65F2SWK
Harris Corporation
HGT1S7N60B3
Infineon Technologies
DF300R07PE4_B6
IXYS
IXYR100N65A3V1
onsemi