DMTH6010LPSWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 15.5A/80A PWRDI
$0.42
Available to order
Reference Price (USD)
1+
$0.41626
500+
$0.4120974
1000+
$0.4079348
1500+
$0.4037722
2000+
$0.3996096
2500+
$0.395447
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMTH6010LPSWQ-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMTH6010LPSWQ-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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