HAT1096C-EL-E
Renesas
Renesas
HAT1096C - P-CHANNEL POWER MOSFE
$0.21
Available to order
Reference Price (USD)
1+
$0.20634
500+
$0.2042766
1000+
$0.2022132
1500+
$0.2001498
2000+
$0.1980864
2500+
$0.196023
Exquisite packaging
Discount
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Upgrade your electronic designs with HAT1096C-EL-E by Renesas, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, HAT1096C-EL-E ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 293mOhm @ 500µA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 790mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CMFPAK
- Package / Case: 6-SMD, Flat Leads
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