MSCSM120DAM31CTBL1NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL1
$125.80
Available to order
Reference Price (USD)
1+
$125.80000
500+
$124.542
1000+
$123.284
1500+
$122.026
2000+
$120.768
2500+
$119.51
Exquisite packaging
Discount
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MSCSM120DAM31CTBL1NG by Microchip Technology is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, MSCSM120DAM31CTBL1NG ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: -
- Package / Case: Module
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