MCB60I1200TZ-TUB
IXYS
IXYS
SICFET N-CH 1.2KV 90A TO268AA
$108.72
Available to order
Reference Price (USD)
1+
$108.71933
500+
$107.6321367
1000+
$106.5449434
1500+
$105.4577501
2000+
$104.3705568
2500+
$103.2833635
Exquisite packaging
Discount
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Boost your electronic applications with MCB60I1200TZ-TUB, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, MCB60I1200TZ-TUB meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA (D3Pak-HV)
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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