DMT64M8LCG-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN3333
$0.44
Available to order
Reference Price (USD)
1+
$0.43705
500+
$0.4326795
1000+
$0.428309
1500+
$0.4239385
2000+
$0.419568
2500+
$0.4151975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMT64M8LCG-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT64M8LCG-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 77.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2664 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 990mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
Related Products
IXYS
IXTF6N200P3
Micro Commercial Co
MCM13N03-TP
Diodes Incorporated
DMT6016LPS-13
IXYS
IXFK98N60X3
Diodes Incorporated
ZXMN2F30FHQTA
Vishay Siliconix
SQJ146EP-T1_GE3
Infineon Technologies
IPL60R140CFD7AUMA1
Infineon Technologies
BSC080N12LSGATMA1
Renesas Electronics America Inc
RJK1028DNS-00#J5
onsemi