IXTF6N200P3
IXYS
IXYS
MOSFET N-CH 2000V 4A I4PAC
$33.05
Available to order
Reference Price (USD)
25+
$21.59000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTF6N200P3 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTF6N200P3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2000 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC™
- Package / Case: ISOPLUSi5-Pak™
Related Products
Micro Commercial Co
MCM13N03-TP
Diodes Incorporated
DMT6016LPS-13
IXYS
IXFK98N60X3
Diodes Incorporated
ZXMN2F30FHQTA
Vishay Siliconix
SQJ146EP-T1_GE3
Infineon Technologies
IPL60R140CFD7AUMA1
Infineon Technologies
BSC080N12LSGATMA1
Renesas Electronics America Inc
RJK1028DNS-00#J5
onsemi
NTMFS5C460NL
Renesas Electronics America Inc