RJK1028DNS-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / MOSFET
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
RJK1028DNS-00#J5 by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RJK1028DNS-00#J5 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
- Vgs (Max): +12V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 10W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
onsemi
NTMFS5C460NL
Renesas Electronics America Inc
2SK3712(1)-AZ
Vishay Siliconix
SQJ403EP-T1_GE3
STMicroelectronics
STFU13N60M2
Diodes Incorporated
DMP6023LFG-7
Renesas Electronics America Inc
RJK03K5DPA-00#J5A
Goford Semiconductor
GT55N06D5
Diodes Incorporated
DMN3010LFG-13
Diodes Incorporated
DMN3025LFG-7
onsemi