ZXMN2F30FHQTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 4.9A SOT23-3
$0.13
Available to order
Reference Price (USD)
3,000+
$0.14105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover ZXMN2F30FHQTA, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SQJ146EP-T1_GE3
Infineon Technologies
IPL60R140CFD7AUMA1
Infineon Technologies
BSC080N12LSGATMA1
Renesas Electronics America Inc
RJK1028DNS-00#J5
onsemi
NTMFS5C460NL
Renesas Electronics America Inc
2SK3712(1)-AZ
Vishay Siliconix
SQJ403EP-T1_GE3
STMicroelectronics
STFU13N60M2
Diodes Incorporated
DMP6023LFG-7
Renesas Electronics America Inc