NP80N06MLG-S18-AY
Renesas
Renesas
NP80N06MLG-S18-AY - SWITCHINGN-C
$1.84
Available to order
Reference Price (USD)
1+
$1.84080
500+
$1.822392
1000+
$1.803984
1500+
$1.785576
2000+
$1.767168
2500+
$1.74876
Exquisite packaging
Discount
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Optimize your electronic systems with NP80N06MLG-S18-AY, a high-quality Transistors - FETs, MOSFETs - Single from Renesas. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NP80N06MLG-S18-AY provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: MP-25K
- Package / Case: TO-220-3
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