DMT6015LFVW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
$0.22
Available to order
Reference Price (USD)
1+
$0.21551
500+
$0.2133549
1000+
$0.2111998
1500+
$0.2090447
2000+
$0.2068896
2500+
$0.2047345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMT6015LFVW-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMT6015LFVW-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Rohm Semiconductor
RQ3P300BHTB1
Diodes Incorporated
DMNH6008SPSQ-13
onsemi
NTHL045N065SC1
Renesas Electronics America Inc
RJK03P5DPA-00#J5A
Harris Corporation
IRF9533
Renesas
NP80N06MLG-S18-AY
Diodes Incorporated
DMP2069UFY4Q-7
Infineon Technologies
IAUS300N08S5N011ATMA1
STMicroelectronics
STL22N60DM6
onsemi