DMP2069UFY4Q-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN2015-
$0.17
Available to order
Reference Price (USD)
1+
$0.16897
500+
$0.1672803
1000+
$0.1655906
1500+
$0.1639009
2000+
$0.1622112
2500+
$0.1605215
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMP2069UFY4Q-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMP2069UFY4Q-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 530mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2015-3
- Package / Case: 3-XDFN
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