DMN6010SCTB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO263 T&R
$1.90
Available to order
Reference Price (USD)
1+
$1.89904
500+
$1.8800496
1000+
$1.8610592
1500+
$1.8420688
2000+
$1.8230784
2500+
$1.804088
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN6010SCTB-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN6010SCTB-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 312W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D²PAK)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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