DMN2013UFDEQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.27
Available to order
Reference Price (USD)
1+
$0.27115
500+
$0.2684385
1000+
$0.265727
1500+
$0.2630155
2000+
$0.260304
2500+
$0.2575925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMN2013UFDEQ-7, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMN2013UFDEQ-7 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.8 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
Related Products
Infineon Technologies
IGT60R070D1ATMA4
Diodes Incorporated
DMG7430LFGQ-7
Renesas Electronics America Inc
2SK3457(2)-AZ
Toshiba Semiconductor and Storage
TK4P60D,RQ
Rohm Semiconductor
SCT2450KEHRC11
Taiwan Semiconductor Corporation
TSM2N7002AKCU RFG
Infineon Technologies
IPA60R280P7SE8228XKSA1
Harris Corporation
RFW2N06RLE
IXYS
IXTQ60N10T
Infineon Technologies