DMN2451UFB4-7B
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN1006-
$0.05
Available to order
Reference Price (USD)
1+
$0.05330
500+
$0.052767
1000+
$0.052234
1500+
$0.051701
2000+
$0.051168
2500+
$0.050635
Exquisite packaging
Discount
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DMN2451UFB4-7B by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMN2451UFB4-7B ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
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