DMN10H220LE-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 2.3A SOT223
$0.65
Available to order
Reference Price (USD)
2,500+
$0.26925
5,000+
$0.25275
12,500+
$0.24450
25,000+
$0.24000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMN10H220LE-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN10H220LE-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
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