BUK9E08-55B,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK9E08-55B - 75A, 55V,
$0.51
Available to order
Reference Price (USD)
1+
$1.72000
50+
$1.37500
100+
$1.20300
500+
$0.93298
1,000+
$0.73656
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BUK9E08-55B,127, a high-quality Transistors - FETs, MOSFETs - Single from NXP Semiconductors. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BUK9E08-55B,127 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 203W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
IXYS
IXFK64N60P
Vishay Siliconix
SQJQ100EL-T1_GE3
Infineon Technologies
SPU03N60S5IN
Nexperia USA Inc.
PSMN3R9-60PSQ
Vishay Siliconix
SIHG35N60E-GE3
Texas Instruments
CSD18511KTT
onsemi
NVTYS007N04CTWG
Vishay Siliconix
SIS412DN-T1-GE3
STMicroelectronics
STN1HNK60
onsemi