FDP038AN06A0
onsemi
onsemi
MOSFET N-CH 60V 17A/80A TO220-3
$3.90
Available to order
Reference Price (USD)
1+
$4.59000
10+
$4.11300
100+
$3.39680
800+
$2.52039
1,600+
$2.36105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with FDP038AN06A0, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FDP038AN06A0 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
SSM3K329R,LF
Diodes Incorporated
DMP2305U-7
Infineon Technologies
IPP052N06L3GXKSA1
Diodes Incorporated
DMN2022UFDF-13
Infineon Technologies
IPA70R600P7SXKSA1
Nexperia USA Inc.
PSMN5R8-40YS,115
STMicroelectronics
STD46P4LLF6
Alpha & Omega Semiconductor Inc.
AOT12N50
Vishay Siliconix
SQJA78EP-T1_GE3
IXYS