BSS169H6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.17544
6,000+
$0.16581
15,000+
$0.15619
30,000+
$0.14464
75,000+
$0.13983
Exquisite packaging
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Experience the power of BSS169H6327XTSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSS169H6327XTSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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