FDN327N
onsemi
onsemi
MOSFET N-CH 20V 2A SUPERSOT3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.13685
6,000+
$0.12856
15,000+
$0.12026
30,000+
$0.11031
75,000+
$0.10616
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FDN327N from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FDN327N delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IPB60R125C6ATMA1
onsemi
FSS273-TL-E
onsemi
FDMS4435BZ
Infineon Technologies
IRF640NPBF
Alpha & Omega Semiconductor Inc.
AOT13N50
Infineon Technologies
IPB136N08N3GATMA1
Infineon Technologies
IST011N06NM5AUMA1
onsemi
FCPF380N60E
Infineon Technologies
BSC093N04LSGATMA1
Vishay Siliconix