IST011N06NM5AUMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-5
$6.78
Available to order
Reference Price (USD)
1+
$6.78000
500+
$6.7122
1000+
$6.6444
1500+
$6.5766
2000+
$6.5088
2500+
$6.441
Exquisite packaging
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Experience the power of IST011N06NM5AUMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IST011N06NM5AUMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 399A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 148µA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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