IRF640NPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 18A TO220AB
$1.32
Available to order
Reference Price (USD)
1+
$1.28000
50+
$1.03300
100+
$0.91140
500+
$0.72026
1,000+
$0.58126
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IRF640NPBF, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRF640NPBF provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Alpha & Omega Semiconductor Inc.
AOT13N50
Infineon Technologies
IPB136N08N3GATMA1
Infineon Technologies
IST011N06NM5AUMA1
onsemi
FCPF380N60E
Infineon Technologies
BSC093N04LSGATMA1
Vishay Siliconix
IRFI9Z24GPBF
Taiwan Semiconductor Corporation
TSM10NC60CF C0G
Toshiba Semiconductor and Storage
T2N7002AK,LM
onsemi
NTMFS4937NT1G
Alpha & Omega Semiconductor Inc.