BSM300GA160DN13CB7HOSA1
Infineon Technologies
Infineon Technologies
BSM300GA160 - INSULATED GATE BIP
$119.66
Available to order
Reference Price (USD)
1+
$119.66000
500+
$118.4634
1000+
$117.2668
1500+
$116.0702
2000+
$114.8736
2500+
$113.677
Exquisite packaging
Discount
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Discover high-performance BSM300GA160DN13CB7HOSA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, BSM300GA160DN13CB7HOSA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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