HGTG34N100E2
Harris Corporation
Harris Corporation
55A, 1000V N-CHANNEL IGBT
$7.54
Available to order
Reference Price (USD)
1+
$7.54000
500+
$7.4646
1000+
$7.3892
1500+
$7.3138
2000+
$7.2384
2500+
$7.163
Exquisite packaging
Discount
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Enhance your electronic designs with HGTG34N100E2 Single IGBTs from Harris Corporation, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Harris Corporation's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 34A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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Harris Corporation