HGTP10N50E1D
Harris Corporation
Harris Corporation
17.5A, 500V, N-CHANNEL IGBT
$2.90
Available to order
Reference Price (USD)
1+
$2.90000
500+
$2.871
1000+
$2.842
1500+
$2.813
2000+
$2.784
2500+
$2.755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTP10N50E1D Single IGBT by Harris Corporation is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Harris Corporation for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 17.5 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
IXYS
MMIX1X340N65B4
onsemi
FGAF20S65AQ
IXYS
IXYP20N120B4
Harris Corporation
HGTP15N40E1
Infineon Technologies
IRG4BC40UPBF-INF
Renesas
RJH60D1DPP-E0#T2
onsemi
FGHL75T65LQDT
IXYS
IXYH120N65C3
Harris Corporation
HGT1S7N60B3D
Renesas Electronics America Inc