NGB8207ABNT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.62
Available to order
Reference Price (USD)
800+
$0.81625
1,600+
$0.73758
2,400+
$0.68840
5,600+
$0.65562
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power electronics with NGB8207ABNT4G Single IGBTs by onsemi, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust onsemi for top-quality components that meet global standards. Request a quote now to learn more about how NGB8207ABNT4G can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 365 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 3.7V, 10A
- Power - Max: 165 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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