BSH103,235
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 850MA TO236AB
$0.12
Available to order
Reference Price (USD)
10,000+
$0.11070
30,000+
$0.10278
50,000+
$0.09948
100,000+
$0.09900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BSH103,235 by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSH103,235 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 540mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SUP70030E-GE3
IXYS
MMIX1T600N04T2
Infineon Technologies
AUIRFS4115-7TRL
Infineon Technologies
BSS119N H7796
Infineon Technologies
BSP135L6906
Diodes Incorporated
BS170P
NXP USA Inc.
NX3008PBKT,115
Vishay Siliconix
SI2347DS-T1-BE3
Panjit International Inc.
PJD60R980E_L2_00001
Infineon Technologies