SUP70030E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 150A TO220AB
$3.52
Available to order
Reference Price (USD)
1+
$3.84000
10+
$3.43900
100+
$2.84160
500+
$2.32392
1,000+
$1.97882
2,500+
$1.88592
5,000+
$1.81955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SUP70030E-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SUP70030E-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.18mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
IXYS
MMIX1T600N04T2
Infineon Technologies
AUIRFS4115-7TRL
Infineon Technologies
BSS119N H7796
Infineon Technologies
BSP135L6906
Diodes Incorporated
BS170P
NXP USA Inc.
NX3008PBKT,115
Vishay Siliconix
SI2347DS-T1-BE3
Panjit International Inc.
PJD60R980E_L2_00001
Infineon Technologies
BSO080P03SHXUMA1
onsemi