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NX3008PBKT,115

NXP USA Inc.
NX3008PBKT,115 Preview
NXP USA Inc.
MOSFET P-CH 30V 200MA SC75
$0.03
Available to order
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$0.0291
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$0.0288
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$0.0285
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416

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