BSO080P03SHXUMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 12.6A 8DSO
$2.20
Available to order
Reference Price (USD)
2,500+
$0.75075
5,000+
$0.71321
12,500+
$0.68640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BSO080P03SHXUMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSO080P03SHXUMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.79W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
FDD13AN06A0
PN Junction Semiconductor
P3M06060K3
STMicroelectronics
STL90N10F7
Toshiba Semiconductor and Storage
TK55S10N1,LQ
Fairchild Semiconductor
FDP120AN15A0
Diodes Incorporated
DMP3068L-13
Infineon Technologies
IRF300P226
Infineon Technologies
IPB80N03S4L-03ATMA1
Taiwan Semiconductor Corporation
TSM4NB65CP ROG
Vishay Siliconix