BSC074N15NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 114A TSON-8-3
$5.88
Available to order
Reference Price (USD)
1+
$5.88000
500+
$5.8212
1000+
$5.7624
1500+
$5.7036
2000+
$5.6448
2500+
$5.586
Exquisite packaging
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Upgrade your electronic designs with BSC074N15NS5ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BSC074N15NS5ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 136µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PG-TSON-8-3
- Package / Case: 8-PowerTDFN
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