RSR015P06HZGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 60V 1.5A TSMT3
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rohm Semiconductor presents RSR015P06HZGTL, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RSR015P06HZGTL delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
Related Products
Infineon Technologies
IRF7201TRPBF
STMicroelectronics
STB180N55F3
Rohm Semiconductor
RQ3E120GNTB
IXYS
IXFX80N50Q3
Toshiba Semiconductor and Storage
TK3A65D(STA4,Q,M)
STMicroelectronics
STU3N80K5
Taiwan Semiconductor Corporation
TSM5NC50CZ C0G
STMicroelectronics
STD5N20LT4
Diodes Incorporated
DMT10H010LCT
IXYS