BSC072N03LDGATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 11.5A 8TDSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.58213
10,000+
$0.56024
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC072N03LDGATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate BSC072N03LDGATMA1 into your systems contact us for more details and pricing.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.5A
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
- Power - Max: 57W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
Related Products
STMicroelectronics
STS3C2F100
Infineon Technologies
IPI60R199CP
Infineon Technologies
IRF7306TR
EPC
EPC2105ENGRT
EPC
EPC2104ENGRT
Vishay Siliconix
SIZ900DT-T1-GE3
Toshiba Semiconductor and Storage
TPC8208(TE12L,Q,M)
Vishay Siliconix
SIZ916DT-T1-GE3
onsemi
NDS8926
Alpha & Omega Semiconductor Inc.