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TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage
TPC8208(TE12L,Q,M) Preview
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 5A SOP8
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)

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