EPC2105ENGRT
EPC
EPC
GANFET 2NCH 80V 9.5A DIE
$0.00
Available to order
Reference Price (USD)
500+
$4.85150
1,000+
$4.38200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2105ENGRT by EPC is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let EPC s EPC2105ENGRT be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 9.5A
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
EPC
EPC2104ENGRT
Vishay Siliconix
SIZ900DT-T1-GE3
Toshiba Semiconductor and Storage
TPC8208(TE12L,Q,M)
Vishay Siliconix
SIZ916DT-T1-GE3
onsemi
NDS8926
Alpha & Omega Semiconductor Inc.
AOD606
Rohm Semiconductor
MP6K13TCR
onsemi
NTJD2152PT1
Alpha & Omega Semiconductor Inc.
AO4800L
Rohm Semiconductor