SIZ900DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 24A POWERPAIR
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The SIZ900DT-T1-GE3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SIZ900DT-T1-GE3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A, 28A
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 19.4A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
- Power - Max: 48W, 100W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair™
- Supplier Device Package: 6-PowerPair™
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