ZXMN6A25N8TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 4.3A 8SO
$0.68
Available to order
Reference Price (USD)
500+
$0.70990
Exquisite packaging
Discount
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Enhance your circuit performance with ZXMN6A25N8TA, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust ZXMN6A25N8TA for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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